SiC and GaN Based Transistor and Circuit Advances
SiC and GaN Based Transistor and Circuit Advances
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发表时间：
2004
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通讯作者：
J. Palmour;J. Milligan;J. Henning;S. Allen;A. Ward;P. Parikh;R. P. Smith;A. Saxler;M. Moore;Y. Wu
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作者：
J. Palmour;J. Milligan;J. Henning;S. Allen;A. Ward;P. Parikh;R. P. Smith;A. Saxler;M. Moore;Y. Wu
在3英寸高纯度半绝缘（HPSI）4 H-SiC衬底上制造的SiC MESFET和MMIC功率放大器的开发已经取得了重大进展。介绍了10瓦和60瓦MESFER的宽带电路。这些MESFET在90°C的基板上RFHTOL 4000小时后没有出现退化。高功率SiC MMIC放大器显示出优异的产量和重复性使用发布的铸造工艺。据报道，HPSI SiC上的GaN HEMT具有>30 W/mm的RF输出功率密度，并且对于较低电压器件，10 GHz的PAE为72%。最后，GaN HEMT在TJ =160°C下的工作寿命超过500小时。
Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manufactured on 3-inch high purity semiinsulating (HPSI) 4H-SiC substrates. Wide bandwidth circuits using both 10 Watt and 60 watt MESFETs are presented. These MESFETs show no degradation after RFHTOL at a baseplate of 90°C for 4000 hours. High power SiC MMIC amplifiers are shown with excellent yield and repeatability using a released foundry process. GaN HEMTs on HPSI SiC are reported with >30 W/mm RF output power density, and 10 GHz PAE of 72% is also demonstrated for lower voltage devices. Finally, a GaN HEMT operating life of over 500 hours at a TJ =160°C is also reported.