Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs
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DOI：
10.1109/jphot.2020.2979564
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发表时间：
2020-04-01
影响因子：
2.4
通讯作者：
Liu, Jianping
中科院分区：
文献类型：
--
作者：
Xu, Rongbin;Mei, Yang;Liu, Jianping
制备了两种具有和不具有横向光约束（LOC）结构的GaN垂直腔面发射激光器（VCSELs），并对其性能进行了比较。与没有LOC的VCSEL相比，有LOC的器件在阈值电流、斜率效率、输出功率和差分量子效率方面都有很大的提高，这主要是由于减小了内部损耗。具有LOC的器件具有清晰的多横模结构。然而，散热变得更糟。讨论了这种设计对热阻和横模的影响。
Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope efficiency, output power and differential quantum efficiency, which was mainly due to the reduction of internal loss. Devices with LOC showed clear and multi-transversal mode structures. However, thermal dissipation became worse. The effects of such a design on thermal resistance and transverse modes were discussed.