Platinum single-electron transistors with tunnel barriers made by atomic layer deposition
Platinum single-electron transistors with tunnel barriers made by atomic layer deposition
复制标题
具有原子层沉积隧道势垒的铂单电子晶体管
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
G. Snider
中科院分区：
文献类型：
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作者：
H. George;A. Orlov;G. Snider
报道了利用氧化铝(Al_2O_3)原子层沉积(ALD)产生的高质量绝缘势垒的铂单电子晶体管(SETS)的制备和测量。成功地测量了300mK时的G-VDS、库仑阻塞振荡和电荷图。ALD技术提供了原子精度和对隧道势垒的精确控制，并极大地扩展了适用于SET制造的材料选择(电极和岛状材料以及势垒介质)。这种制造方法的目标是大规模生产电视机，这将加快它们进入实际应用的速度。
The fabrication and measurements of platinum single-electron transistors (SETs) employing high quality insulating barriers produced by atomic layer deposition (ALD) of alumina (Al2O3) are reported. The G-Vds, Coulomb blockade oscillations, and the charging diagram of the SET at 300 mK were successfully measured. The ALD technique provides atomic accuracy and precise control of the tunnel barriers and greatly expands the choice of materials suitable for SET fabrication (both electrodes and island materials as well as barrier dielectrics). This fabrication method is targeted toward large scale production of SETs, which will accelerate their adoption into practical applications.