Mg2+ enhances voltage sensor/gate coupling in BK channels.
Mg2+ enhances voltage sensor/gate coupling in BK channels.
复制标题
MG2+增强了BK通道中的电压传感器/门耦合。
DOI:
10.1085/jgp.200709877
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发表时间:
2008-01
影响因子:
3.8
通讯作者:
Ma, Zhongming
中科院分区:
文献类型:
--
作者:
Horrigan, Frank T.;Ma, Zhongming
BK (Slo1) potassium channels are activated by millimolar intracellular Mg2+ as well as micromolar Ca2+ and membrane depolarization. Mg2+ and Ca2+ act in an approximately additive manner at different binding sites to shift the conductance–voltage (GK-V) relation, suggesting that these ligands might work through functionally similar but independent mechanisms. However, we find that the mechanism of Mg2+ action is highly dependent on voltage sensor activation and therefore differs fundamentally from that of Ca2+. Evidence that Ca2+ acts independently of voltage sensor activation includes an ability to increase open probability (PO) at extreme negative voltages where voltage sensors are in the resting state; 2 μM Ca2+ increases PO more than 15-fold at −120 mV. However 10 mM Mg2+, which has an effect on the GK-V relation similar to 2 μM Ca2+, has no detectable effect on PO when voltage sensors are in the resting state. Gating currents are only slightly altered by Mg2+ when channels are closed, indicating that Mg2+ does not act merely to promote voltage sensor activation. Indeed, channel opening is facilitated in a voltage-independent manner by Mg2+ in a mutant (R210C) whose voltage sensors are constitutively activated. Thus, 10 mM Mg2+ increases PO only when voltage sensors are activated, effectively strengthening the allosteric coupling of voltage sensor activation to channel opening. Increasing Mg2+ from 10 to 100 mM, to occupy very low affinity binding sites, has additional effects on gating that more closely resemble those of Ca2+. The effects of Mg2+ on steady-state activation and IK kinetics are discussed in terms of an allosteric gating scheme and the state-dependent interactions between Mg2+ and voltage sensor that may underlie this mechanism.
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影响因子:
2.9
作者:
Cui, JM;Aldrich, RW
通讯作者:
Aldrich, RW
影响因子:
3.8
作者:
Diaz, F;Wallner, M;Stefani, E;Toro, L;Latorre, R
通讯作者:
Latorre, R
DOI:
10.1085/jgp.109.5.647
发表时间:
1997-05
期刊:
The Journal of general physiology
影响因子:
--
作者:
Cui J;Cox DH;Aldrich RW
通讯作者:
Aldrich RW
影响因子:
3.4
作者:
Avdonin, V;Tang, XD;Hoshi, T
通讯作者:
Hoshi, T
影响因子:
16.2
作者:
Jiang, YX;Pico, A;MacKinnon, R
通讯作者:
MacKinnon, R