Toward GaSb-Based Monolithically Integrated Widely-Tunable Lasers for Extended Short- and Mid-Wave Infrared Wavelengths
Toward GaSb-Based Monolithically Integrated Widely-Tunable Lasers for Extended Short- and Mid-Wave Infrared Wavelengths
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用于扩展短波和中波红外波长的 GaSb 基单片集成宽可调激光器
DOI：
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发表时间：
2023
影响因子：
2.5
通讯作者：
S. Arafin
中科院分区：
文献类型：
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作者：
Weicheng You;S. Dwivedi;I. Faruque;D. John;A. McFadden;C. Palmstrøm;L. Coldren;S. Arafin
在扩展的短波和中波红外光谱范围内，支持有源和无源元件的全功能光子集成电路（PIC）平台是下一代光学系统的重要研究方向。本文设计了基于偏置量子阱的光子集成电路，该电路主要由四个波长为2560nm的宽可调谐单模激光器组成。该平台需要选择性地去除位于GaSb基光波导层上方的InGaAsSb多量子阱，然后进行单层GaSb再生。还报告了令人鼓舞的再生初步实验结果，以证实拟议的PICs的可行性。仿真结果表明，可调谐激光器的调谐范围可达~ 120nm。这里进行的准理论工作是向展示复杂的非电信PICs迈出的第一步，它可以提供全面的光子功能。
A fully-functional photonic integrated circuit (PIC) platform with supporting active and passive components in the extended short- and mid-wave infrared spectral regime is of significant research interest for next-generation optical systems. Here we design offset quantum well-based photonic integrated circuits which primarily consist of four section-based widely tunable single-mode lasers emitting at 2560 nm. The platform requires the selective removal of InGaAsSb multi-quantum wells located above a GaSb-based optical waveguide layer and then subsequent single blanket GaSb regrowth. Encouraging preliminary experimental results on regrowth are also reported to confirm the feasibility of the proposed PICs. The simulation result for the tunable laser design shows that a tuning range as wide as ~120 nm is possible. The quasi-theoretical work performed here is an initial step towards demonstrating complex non-telecommunication PICs which could offer a comprehensive range of photonic functionalities.
DOI：
10.1016/j.jqsrt.2013.07.002
发表时间：
2013-11-01
影响因子：
2.3
作者：
Rothman, L. S.;Gordon, I. E.;Wagner, G.
通讯作者：
Wagner, G.