Superbroad near-infrared photoluminescence from bismuth-doped CsPbI_3 perovskite nanocrystals
Superbroad near-infrared photoluminescence from bismuth-doped CsPbI_3 perovskite nanocrystals
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DOI：
10.1364/oe.25.033283
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发表时间：
2017-12
期刊：
影响因子：
3.8
通讯作者：
F. Zhu;Zi-Jun Yong;Bo Liu;Ya-Meng Chen;Yang Zhou;Ju-Ping Ma;Hong-Tao Sun;Yong-Zheng Fang
中科院分区：
文献类型：
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作者：
F. Zhu;Zi-Jun Yong;Bo Liu;Ya-Meng Chen;Yang Zhou;Ju-Ping Ma;Hong-Tao Sun;Yong-Zheng Fang
掺铋材料具有优异的近红外（NIR）光致发光性能。然而，合成双掺杂、nir发光、具有高PL量子产率的纳米材料仍然具有挑战性。在这里，实现了平均尺寸小于10 nm的双掺杂CsPbI3钙钛矿纳米晶体（NCs），并显示出覆盖电信和第二生物光学窗口的超宽近红外PL。当Bi掺杂浓度为0.074%时，NCs的近红外发光量子产率高达7.17%。此外，可以实现从半导体CsPbI3到铋相关活性中心的高效能量转移。我们期望所开发的系统可以在光电和光子器件以及生物成像中找到应用。这项工作丰富了双掺杂发光材料的宝库，并可能激发合成其他类型双活化纳米材料的研究兴趣。
Bismuth-doped materials show fascinating near-infrared (NIR) photoluminescence (PL) properties. However, synthesizing Bi-doped, NIR-luminescent, nanometer-sized materials with high PL quantum yields remains challenging. Here, Bi-doped CsPbI3 perovskite nanocrystals (NCs) with an average size less than 10 nm and showing a superbroad NIR PL covering the telecommunication and second biological optical windows were achieved. The NIR PL quantum yield of these NCs is up to 7.17% with the Bi doping concentration of 0.074%. Additionally, efficient energy transfer from the semiconducting CsPbI3 to bismuth-related active center can be realized. We anticipate that the developed systems may find applications in optoelectronic and photonic devices as well as biological imaging. This work enriches the bank of Bi-doped luminescent materials, and might stimulate research interest for synthesizing other classes of Bi-activated nanomaterials.