EUV resist development for 16nm half pitch
EUV resist development for 16nm half pitch
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16nm半间距EUV光刻胶开发
DOI：
10.1117/12.916555
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Tooru Kimura
中科院分区：
文献类型：
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作者：
Ken Maruyama;Hiroki Nakagawa;Shalini Sharma;Y. Hishiro;M. Shimizu;Tooru Kimura
为了在EUV曝光时解析16 nm半间距及以上，我们不仅开发了抗蚀剂用新材料，还开发了底层材料用新材料。对于抗蚀剂，开发了短酸扩散长度的光酸发生剂（PAG）以提高分辨率。对于底层，具有高接触角（CA）的新材料改善了朝向最小特征尺寸的印刷的线塌陷裕度。结果表明，衬层CA是提高分辨率的重要因素之一。此外，研究了显影时间的影响，以提高分辨率。较短的开发时间比长的开发时间获得了分辨率的提高。最后，结合这些结果进行了研究。结果表明，JSR EUV抗蚀剂显示出15nm半间距分辨率的潜力。
In order to resolve 16 nm half pitch and beyond upon EUV exposure, we have developed new materials for not only resists but also for under layer materials. As for resist, short acid diffusion length photo-acid generator (PAG) was developed for high resolution. As for under layer, new material with high contact angle (CA) improved line collapse margin towards printing of minimum feature size. It was found that CA of under layer was one of the important factors for resolution improvement. Furthermore, effect of development time was investigated to improve resolution. Short development time gained resolution improvement compared with long one. Finally, combination of these results was investigated. As a result, JSR EUV resist showed the potential of 15nm half pitch resolution.