Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs
Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs
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DOI：
10.1557/opl.2015.402
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
Yugo Kozuka;Kazuki Ikeyama;Toshiki Yasuda;T. Takeuchi;S. Kamiyama;M. Iwaya;I. Akasaki
中科院分区：
文献类型：
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作者：
Yugo Kozuka;Kazuki Ikeyama;Toshiki Yasuda;T. Takeuchi;S. Kamiyama;M. Iwaya;I. Akasaki
我们研究了具有高生长速率的AlInN层的MOVPE生长条件，并获得了0.5µm/h的光滑表面。我们发现，短的气体混合时间，相对较高的生长温度，和非常低的In/Al供应比的关键生长参数，以获得高生长速率和表面光滑的AlInN层的同时。在此生长条件下生长的AlInN/GaN DBR表面光滑，反射率超过99%。
We investigated MOVPE growth conditions for AlInN layers with high growth rates and obtained 0.5µm/h with smooth surfaces. We found that short gas mixing time, relatively high growth temperature, and very low In/Al supply ratio were key growth parameters in order to obtain the AlInN layers with high growth rate and smooth surface simultaneously. AlInN/GaN DBRs grown under such growth conditions showed smooth surfaces and a reflectivity of over 99%.