Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm.
Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm.
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DOI：
10.1021/acsami.0c09060
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发表时间：
2020-07
影响因子：
9.5
通讯作者：
X. Zou;Lu Liu;Jingping Xu;Hongjiu Wang;Wing-Man Tang
中科院分区：
文献类型：
--
作者：
X. Zou;Lu Liu;Jingping Xu;Hongjiu Wang;Wing-Man Tang
Few-layered molybdenum disulfide (MoS2) has demonstrated promising advantages for the integration of next-generation electronic devices. A vertical short-channel MoS2 transistor with a channel length of sub-10 nm can be realized using mica as the insulated mesa and MoS2 flake dry-transferred onto the mica as the channel. A near-perfect symmetrical and fully saturated output characteristic can be obtained for the positive or negative drain-source voltage. This result is attributed to an effective transformation of the drain-source electrode contact from Schottky contact to ohmic contact via forming gas annealing. The vertical-channel MoS2 transistor with a channel length of 8.7 nm exhibits excellent electrical characteristics, e.g., a negligible hysteresis voltage of 60 mV, an extraordinarily small subthreshold swing of 73 mV/dec, a considerably weakened drain-induced barrier lowering effect (100 mV/V), and the first-reported intrinsic delay time of 2.85 ps. Moreover, a logic inverter can be realized using the two vertical-channel MoS2 transistors, with a high voltage gain of 33. Experimental results indicate that the developed method is a potential approach for fabricating MoS2 transistors with an ultrashort channel and high performance, and consequently, manufacturing MoS2-based integrated circuits.
