Photoemission and band-calculation studies of the charge-density wave in CuV 2 S 4
Photoemission and band-calculation studies of the charge-density wave in CuV 2 S 4
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CuV 2 S 4 中电荷密度波的光电发射和能带计算研究
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
S. Nagata
中科院分区：
文献类型：
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作者：
J. Matsuno;A. Fujimori;L. Mattheiss;R. Endoh;S. Nagata
我们研究了电子结构及其在电荷密度波~ CDW上的变化。通过光电子能谱和第一性原理能带结构计算，研究了尖晶石型CuV 2S 4的相变。的光电子能谱显示赝隙样的行为和差距的大小估计为; 90毫电子伏。赝能隙的大的能量尺度相比，转变温度和其异常的温度依赖性意味着所涉及的相互作用是在强耦合制度。计算的电子磁化率x（q）在q处显示出小的峰。1140@110 #，与观测波矢Q一致。14@110 #表征CDW。这一结果表明，费米面嵌套是至少部分负责CDW的形成。
We have studied the electronic structure and its changes across the charge-density-wave ~ CDW ! transition in spinel-type CuV 2 S 4 by photoemission spectroscopy and first-principles band-structure calculations. The photoemission spectra show pseudogap-like behavior and the gap size is estimated to be ; 90 meV. The large energy scale of the pseudogap compared to the transition temperature and its anomalous temperature dependence implies that the involved interaction is in the strong-coupling regime. The calculated electronic susceptibility x ( q ) shows a small peak at q . 1140 @ 110 # , which is consistent with the observed wave vector q . 14 @ 110 # characterizing the CDW. This result suggests that Fermi surface nesting is at least partly responsible for the CDW formation.