Strained quantum well modulation-doped ingasb/algasb structures grown by molecular beam epitaxy

Strained quantum well modulation-doped ingasb/algasb structures grown by molecular beam epitaxy
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DOI:
10.1007/bf02661383
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发表时间:
1993-03
影响因子:
2.1
通讯作者:
J. Klem;J. Lott;J. Schirber;S. Kurtz;S. Lin
J. Klem;J. Lott;J. Schirber;S. Kurtz;S. Lin
中科院分区:
工程技术4区
文献类型:
--
作者:
J. Klem;J. Lott;J. Schirber;S. Kurtz;S. Lin

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