MOS CONTROLLED DIODES - A NEW POWER DIODE
MOS CONTROLLED DIODES - A NEW POWER DIODE
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DOI：
10.1016/0038-1101(95)98663-n
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发表时间：
1995-05-01
影响因子：
1.7
通讯作者：
AMARATUNGA, GAJ
中科院分区：
文献类型：
--
作者：
HUANG, Q;AMARATUNGA, GAJ
提出了一种实现快速开关、高功率、低损耗二极管的新概念。MOS控制二极管（MCD）利用MOSFET在二极管反向恢复期间和之前控制少数载流子的注入。采用二维数值模拟的方法对其中一种器件结构——沟槽式MCD （TMCD）进行了分析。仿真结果表明，TMCD在很宽的载流子寿命和正向电流密度范围内提供了很好的注入控制。当TMCD在多数载流子传导模式下切换时，其开关损耗降至理论最小。
A novel concept to achieve fast switching, high power, low loss diode is proposed. The MOS Controlled Diode (MCD) utilizes a MOSFET to control the injection of minority carriers during and before the reverse recovery of the diode. One of such device structure, the Trench MCD (TMCD) was analyzed using two-dimensional numerical simulation. Simulated results show that the TMCD provides good control of the injections over a wide range of carrier lifetimes and forward current densities. The switching loss of the TMCD was reduced to theoretical minimum when it was switched under majority carrier conduction mode.