Event-related brain potentials and error-related processing: An analysis of incorrect responses to go and no-go stimuli
Event-related brain potentials and error-related processing: An analysis of incorrect responses to go and no-go stimuli
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DOI：
10.1111/j.1469-8986.1996.tb02107.x
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发表时间：
1996-01-01
期刊：
影响因子：
3.7
通讯作者：
Donchin, E
中科院分区：
文献类型：
--
作者：
Scheffers, MK;Coles, MGH;Donchin, E
最近的研究表明，有一个组成部分的事件相关的脑电位，错误相关的负性（ERN），这是与错误检测和补救措施，如错误抑制，立即纠错，或错误补偿。本实验使用了去/不去任务，更精确地定义了这个组件的功能意义。在这项任务中，ERN被观察到的不正确的反应，去试验（错误的选择）和不去试验（错误的行动）的反应。由于错误的行动不能立即纠正执行另一个响应，这些结果表明，由ERN表现的过程是不依赖于立即纠错。其他方面的数据收敛表明，ERN过程更密切相关的错误检测和检测和补救措施之间的连接可能取决于任务的情况。
Recent research has suggested that there is a component of the event-related brain potential, the error-related negativity (ERN), that is associated with error detection and remedial actions such as error inhibition, immediate error correction, or error compensation. The present experiment used a go/no-go task to define more precisely the functional significance of this component. In this task, an ERN was observed for incorrect responses on go trials (errors of choice) and for responses on no-go trials (errors of action). Because errors of action cannot be corrected immediately by executing another response, these results indicate that the process manifested by the ERN is not dependent on immediate error correction. Other aspects of the data converge in suggesting that the ERN process is more closely related to error detection and that the connections between detection and remedial actions may depend on the task situation.