Bulk micromachining of silicon
Bulk micromachining of silicon
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DOI：
10.1109/5.704259
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发表时间：
1998-08-01
影响因子：
20.6
通讯作者：
Petersen, KE
中科院分区：
文献类型：
--
作者：
Kovacs, GTA;Maluf, NI;Petersen, KE
体硅刻蚀技术用于选择性地从衬底上去除硅，已被广泛应用于微机械传感器、驱动器和结构的制造中。尽管最近出现了更高分辨率的表面微加工方法，但目前出厂的大多数硅传感器都是使用体刻蚀技术制造的。特别是考虑到新引入的与互补金属氧化物半导体兼容的干法刻蚀方法，体微机械加工在不久的将来不太可能减少普及。根据腐蚀剂的状态，可用的蚀刻方法分为三类：湿法、蒸气和等离子体。对于每一类，从蚀刻结果、成本、复杂性、工艺兼容性和许多其他因素方面对可用的工艺进行了审查和比较。此外，还给出了几种典型的微机械加工结构。
Bulk silicon etching techniques, used to selectively remove silicon from substrates, have been broadly applied in the fabrication of micromachined sensors, actuators, and structures. Despite the more recent emergence of higher resolution, surface-micromachining approaches, the majority of currently shipping silicon sensors are made using bulk etching. Particularly in light of newly introduced dry etching methods compatible with complementary metal-oxide-semiconductors, it is unlikely that bulk micromachining will decrease in popularity in the near future. The available etching methods fall into three categories in terms of the state of the etchant: wt, vapor, and plasma. For each category, the available processes are reviewed and compared in terms of etch results, cost, complexity, process compatibility, and a number of other factors. In addition, several example micromachined structures are presented.