A direct investigation of photocharge transfer across monomolecular layer between C60 and CdS quantum dots by photoassisted conductive atomic force microscopy

A direct investigation of photocharge transfer across monomolecular layer between C60 and CdS quantum dots by photoassisted conductive atomic force microscopy
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通过光辅助导电原子力显微镜直接研究 C-60 和 CdS 量子点之间单分子层的光电荷转移

DOI:
10.1063/1.4947571
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发表时间:
2016-04
期刊:
影响因子:
1.6
通讯作者:
Xiaohong Jiang;He Liu;Xing-tang Zhang;G. Cheng;Shujie Wang;Z. Du
Xiaohong Jiang;He Liu;Xing-tang Zhang;G. Cheng;Shujie Wang;Z. Du
中科院分区:
材料科学4区
文献类型:
--
作者:
Xiaohong Jiang;He Liu;Xing-tang Zhang;G. Cheng;Shujie Wang;Z. Du

文献摘要

相似文献

采用Langmuir-Blodgett (LB)技术,以花生酸(AA)、硬脂酸(SA)和十八胺(OA)为添加剂,在ITO衬底上制备了C60和CdS量子点(QDs)复合组件。利用光导原子力显微镜对CdS量子点和C60/CdS复合组件进行了点接触电流-电压(I-V)测量。结果表明,沉积在ITO衬底上的CdS、C60/CdS组件具有线性特性,且在光照条件下电流比在黑暗条件下明显增大。用相干非共振隧穿机制来解释当前的现象。认为通过烷基链隧穿的光诱导载流子CdS量子点能迅速增加电流。
The composite assembly of C60 and CdS Quantum Dots (QDs) on ITO substrate was prepared by Langmuir-Blodgett (LB) technique using arachic acid (AA), stearic acid (SA) and octadecanyl amine (OA) as additives. Photoassisted conductive atomic force microscopy was used to make point contact current-voltage (I-V) measurements on both the CdS QDs and the composite assembly of C60/CdS. The result make it clear that the CdS, C60/CdS assemblies deposited on ITO substrate showed linear characteristics and the current increased largely under illumination comparing with that in the dark. The coherent, nonresonant tunneling mechanism was used to explain the current occurrence. It is considered that the photoinduced carriers CdS QDs tunneled through alkyl chains increased the current rapidly.