FAR-INFRARED EMISSION-SPECTROSCOPY OF HOT 2-DIMENSIONAL PLASMONS IN AL0.3GA0.7AS/GAAS HETEROJUNCTIONS
FAR-INFRARED EMISSION-SPECTROSCOPY OF HOT 2-DIMENSIONAL PLASMONS IN AL0.3GA0.7AS/GAAS HETEROJUNCTIONS
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DOI：
10.1063/1.114333
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发表时间：
1995-10-16
影响因子：
4
通讯作者：
TSUI, DC
中科院分区：
文献类型：
--
作者：
HIRAKAWA, K;YAMANAKA, K;TSUI, DC
用远红外发射光谱研究了Al0.3Ga0.7As/GaAs异质结中热二维(2D)等离子体的辐射衰变，确定了辐射谱线形状。在太赫兹波段获得了窄带等离子体发射线。实验观测到的等离子体激元发射能量与最近发展的全栅理论的结果符合得很好。结果表明，等离子体发射强度随电子系统输入电功率的增加而增加，并遵循以热2D电子系统的电子温度为特征的玻色-爱因斯坦分布规律。这一事实表明，在本实验范围内，2D等离子体是热激发的。(C)1995年美国物理研究所。
We have investigated the radiative decay of hot two-dimensional (2D) plasmons in Al0.3Ga0.7As/GaAs heterostructures by far-infrared emission spectroscopy and determined the spectral line shape of the radiation. Narrowband plasmon emission lines an obtained in the terahertz regime. The experimentally observed energies of plasmon emission are in good agreement with the results of a recently developed full grating theory. The plasmon emission intensity is found to increase with increasing input electrical power to the electron system and follows the Bose-Einstein distribution law characterized by the electron temperature of the hot 2D electron system. This fact indicates that 2D plasmons are thermally excited in the present experimental regime. (C) 1995 American Institute of Physics.