High-Performance Polycrystalline Silicon Thin-Film Transistors without Source/Drain Doping by Utilizing Anisotropic Conductivity of Bridged-Grain Lines
High-Performance Polycrystalline Silicon Thin-Film Transistors without Source/Drain Doping by Utilizing Anisotropic Conductivity of Bridged-Grain Lines
复制标题
利用桥晶线各向异性电导率实现无源漏掺杂的高性能多晶硅薄膜晶体管
DOI：
10.1002/aelm.201900961
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发表时间：
2020
影响因子：
6.2
通讯作者：
Hoi-Sing Kwok
中科院分区：
文献类型：
--
作者：
Meng Zhang;Haotao Lin;Sunbin Deng;Rongsheng Chen;Guijun Li;Su-Ting Han;Ye Zhou;Yan Yan;Wei Zhou;Man Wong;Hoi-Sing Kwok
利用桥晶线的各向异性导电性，设计、模拟和制作了一种无源漏掺杂的多晶硅薄膜晶体管(S/D)。在新的设计中，电流沿S/D地区的BG线流动，并垂直于航道中的BG线流动。利用BG线的各向异性导电性，省去了S/D掺杂工艺，降低了工艺成本。同时，保留了采用BG线的优势。与常规TFT相比，未掺杂S/D的TFT表现出了优异的器件特性。在热载流子应力和正/负偏压下，对不掺杂S/D的TFT的可靠性进行了评估。此外，提出的新的TFT结构允许更广泛的掺杂激活条件。
By utilizing anisotropic conductivity of bridged‐grain (BG) lines, a polycrystalline silicon (poly‐Si) thin‐film transistor (TFT) without source/drain (S/D) doping is designed, simulated, and fabricated. In the new design, the current is made to flow along the BG lines in the S/D region and flow perpendicularly to the BG lines in the channel. By taking advantage of the anisotropic conductivity of the BG lines, the S/D doping process is eliminated and the fabrication process cost is reduced. Meanwhile, the advantages of adopting BG lines are maintained. The as‐fabricated TFTs without S/D doping exhibit excellent device characteristics, compared with normal TFTs. The reliability of TFTs without S/D doping is also evaluated under hot carrier stress and negative/positive bias stress. Additionally, the proposed new TFT structure allows a wider range of dopant activation conditions.