Diffusion structures in Mo vs. Si solid-solid diffusion couples
Diffusion structures in Mo vs. Si solid-solid diffusion couples
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DOI：
10.1016/s1359-6462(98)00111-0
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发表时间：
1998-05
影响因子：
6
通讯作者：
P. Tortorici;M. Dayananda
中科院分区：
文献类型：
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作者：
P. Tortorici;M. Dayananda
Mo 与 Si 固-固扩散偶在 900-1350 C 之间的选定温度下进行退火，以形成扩散结构。这对夫妇在扩散区形成了MoSi 2 和Mo 5 Si 3 层； MoSi 2 层的厚度比Mo 5 Si 3 层大约大1-2个数量级。 MoSi 2 层在扩散方向上呈现抛物线生长和柱状微观结构。 MoSi 2 层上的Si/Mo 比率变化超过1。 91 至 1.98。硅化硅2
Mo vs. Si solid-solid diffusion couples were annealed at selected temperatures between 900-1350 C for the development of diffusion structure. The couples developed layers of MoSi 2 and Mo 5 Si 3 in the diffusion zone; the MoSi 2 layer was approximately 1–2 orders of magnitude larger in thickness than the Mo 5 Si 3 layer. The MoSi 2 layer exhibited parabolic growth and a columnar microstructure in the direction of diffusion. The Si to Mo ratio across the MoSi 2 layer varied over1. 91 to 1.98. The MoSi 2