Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics
Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics
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通过 NH3 等离子体处理高 k 栅极电介质提高背栅 MoS2 晶体管的性能
DOI：
10.1088/1674-1056/ab50fe
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发表时间：
2019
影响因子：
1.7
通讯作者：
Jing-Ping Xu
中科院分区：
文献类型：
--
作者：
Jian-Ying Chen;Xin-Yuan Zhao;Lu Liu;Jing-Ping Xu
采用nh3等离子体处理提高了栅极介质和界面的质量。采用Al2O3作为HfO2和MoS2之间的缓冲层，降低了界面态密度。制作了四组具有不同栅极介质的MOS电容器和后门晶体管，并比较了它们的C-V和I-V特性。结果表明，经nh3等离子体处理的Al2O3/HfO2背栅晶体管具有最佳的电学性能：高通断电流比为1.53 × 107，场效应迁移率为26.51 cm2/V·s，亚阈值摆幅为145 mV/dec。这是由于nh3等离子体处理和添加Al2O3作为缓冲层改善了栅极介电介质和界面质量。
NH3-plasma treatment is used to improve the quality of the gate dielectric and interface. Al2O3 is adopted as a buffer layer between HfO2 and MoS2 to decrease the interface-state density. Four groups of MOS capacitors and back-gate transistors with different gate dielectrics are fabricated and their C–V and I–V characteristics are compared. It is found that the Al2O3/HfO2 back-gate transistor with NH3-plasma treatment shows the best electrical performance: high on–off current ratio of 1.53 × 107, higher field-effect mobility of 26.51 cm2/V·s, and lower subthreshold swing of 145 mV/dec. These are attributed to the improvements of the gate dielectric and interface qualities by the NH3-plasma treatment and the addition of Al2O3 as a buffer layer.