Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting
Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting
复制标题
DOI：
10.1143/apex.3.065203
复制
发表时间：
2010-01-01
影响因子：
2.3
通讯作者：
Sakoda, Kazuaki
中科院分区：
文献类型：
--
作者：
Mano, Takaaki;Abbarchi, Marco;Sakoda, Kazuaki
在AlGaAs(111)A表面生长的自组装GaAs量子点（QDs）对精细结构分裂（FSS）有很好的抑制作用。由于生长平面的三重旋转对称，实现了高度对称的激子，FSS显著降低。扫描隧道显微镜和横断面透射显微镜显示一个横向对称的点形状，具有突然的界面。偏振光致发光光谱证实了激子跃迁，FSS小于20 μ eV，比（100）上生长的量子点明显减少。(C) 2010日本应用物理学会
Great suppression of fine-structure splitting (FSS) is demonstrated in self-assembled GaAs quantum dots (QDs) grown on AlGaAs(111)A surface. Due to the three-fold rotational symmetry of the growth plane, highly symmetric excitons with significantly reduced FSS are achieved. Scanning tunneling microscopy and cross-sectional transmission microscopy demonstrate a laterally symmetric dot shape with abrupt interface. Polarized photoluminescence spectra confirm excitonic transition with FSS smaller than similar to 20 mu eV, a substantial reduction from that of QDs grown on ( 100). (C) 2010 The Japan Society of Applied Physics