TbFeco film with W underlayer and overlayer for perpendicular magnetic recording
TbFeco film with W underlayer and overlayer for perpendicular magnetic recording
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DOI：
10.1016/j.jmmm.2004.10.041
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发表时间：
2005-02
影响因子：
2.7
通讯作者：
T. Rahman;Xiaoxi Liu;A. Morisako;M. Matsumoto
中科院分区：
文献类型：
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作者：
T. Rahman;Xiaoxi Liu;A. Morisako;M. Matsumoto
为了防止TbFeCo薄膜的氧化，在TbFeCo薄膜上制备了W底层和W覆盖层，研究了W底层和W覆盖层对TbFeCo薄膜磁性能和磁畴结构的影响。只有5nm的覆盖层和20nm的底层可以成功地保护膜不被氧化。饱和磁化强度随衬层厚度的增加而增加，并且当TbFeCo膜变得更薄时，效果更明显。W衬层对防止反射矩形比（S）随磁性层厚度减小而减小是非常有效的。当磁性层厚度为15nm时，有衬层和无衬层的薄膜的S值分别为1.0和0.8。在磁力显微镜观察中，当使用W底层和覆盖层时，平均磁畴尺寸减小。
TbFeCo film is prepared with W underlayer and overlayer to protect the film from oxidation and its effect on the magnetic properties and domain structure of the film has been investigated. Only 5nm overlayer and 20nm underlayer can successfully protect the film from oxidation. The saturation magnetization increases with increase in underlayer thickness and the effect is more pronounced when TbFeCo films become thinner. W underlayer is very effective to prevent the reduction of remanent squareness ratio (S) with decrease in magnetic layer thickness. The value of S is 1.0 and 0.8, for the films with and without underlayer, respectively, where magnetic layer thickness was 15nm. In magnetic force microscope observations, average magnetic domain size is reduced when W underlayer and overlayer are used.