A Lithographic Resist-Based Simple Technology for High Yield Microfabrication of Air Bridges
A Lithographic Resist-Based Simple Technology for High Yield Microfabrication of Air Bridges
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基于光刻胶的简单技术，用于高产空气桥微加工
DOI：
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发表时间：
2012
影响因子：
2.7
通讯作者：
S. Jie
中科院分区：
文献类型：
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作者：
S. Jie
提出了一种基于抗蚀剂（ma-N2403和ZEP 520 A7）的在任意衬底上制作空气桥的简便工艺。它只涉及电子束光刻的两个步骤。通过改变光刻过程中的曝光剂量，可以使抗蚀剂发生不同程度的交联，并将永久交联聚合物用于桥墩。使用蒸发的205 nm厚的Ti/Au薄膜来构造桥。通常，空气桥的长度超过18 μm，高度超过2 μm，宽度超过5 μm。由于金属中累积的应变，它自然形成拱桥，因此不需要临界点干燥。金属和聚合物之间的粘附力相当强，即使在温和的超声处理中也能存活。这封信应有助于一个简易的技术制造空气桥的各种应用在微机电系统。
A resist (ma-N 2403 and ZEP 520A7)-based convenient technology to fabricate air bridges on arbitrary substrate is proposed. It involves only two steps of electron-beam lithography. By changing the exposure dose during lithography, the resist can be cross-linked to different extent, and the permanently cross-linked polymer is used for piers. An evaporated 205-nm-thick Ti/Au thin film is used to construct the bridges. Typically, the air bridge is more than 18 μm long, 2 μm high, and 5 μm wide. Due to the accumulated strain in the metal, it naturally forms an arch bridge, rendering no need for critical point drying. The adhesion between the metal and the polymer is considerably strong, even surviving mild sonication. This letter should contribute to a facile technology for manufacturing air bridges for various applications in microelectromechanical systems.