Synthesis of a Novel Rocksalt-Type Ternary Nitride Semiconductor MgSnN2 Using the Metathesis Reaction Under High Pressure
Synthesis of a Novel Rocksalt-Type Ternary Nitride Semiconductor MgSnN2
Using the Metathesis Reaction Under High Pressure
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利用高压复分解反应合成新型岩盐型三元氮化物半导体 MgSnN2
DOI：
10.1002/ejic.201901059
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发表时间：
2019
影响因子：
2.3
通讯作者：
T. Taniguchi
中科院分区：
文献类型：
--
作者：
F. Kawamura;M. Imura;H. Murata;N. Yamada;T. Taniguchi
在高压（P= 5.5 GPa/T= 850℃/1 h）条件下，利用复分解反应合成了新型三元氮化物半导体mgsnn2。本研究中得到的mgsnn2具有岩盐结构，而我们已经报道过用类似方法合成的znsnn2具有纤锌矿结构。具有岩盐结构的mgsnn2的（111）平面有望与GaN（0001）很好地匹配。mgsnn2的带隙估计为2.3 eV，在室温下表现出明显的阴极发光峰。mgsnn2可以在光伏吸收剂、发光器件的发射层、光催化剂或不透明颜料中找到潜在的用途，因为构成mgsnn2的元素是无毒的和富含稀土的。本研究合成的mgsnn2粉末具有优异的结晶度，证明高压下的复分解反应是合成新型多组分氮化物的优越方法。
Novel ternary nitride semiconductor MgSnN2was synthesized using the metathesis reaction under high pressure (P= 5.5 GPa/T= 850 °C/1 h). MgSnN2obtained in this study showed a rocksalt structure, although we have reported that ZnSnN2synthesized using a similar method has a wurtzite structure. The (111) plane of MgSnN2with a rocksalt structure is expected to match well with GaN (0001). The band gap of MgSnN2is estimated to be 2.3 eV and it shows a distinct cathodoluminescence peak at room temperature. MgSnN2can find potential use in photovoltaic absorber, in the emitting layer of a light‐emitting device, and photocatalyst or opaque pigment because the elements composing MgSnN2are nontoxic and earth‐abundant. MgSnN2powder synthesized in this study showed excellent crystallinity, proving that metathesis reaction under high pressure is a superior method for synthesizing novel multicomponent nitrides.
影响因子：
2.1
作者：
Feldberg, N.;Aldous, J. D.;Durbin, S. M.
通讯作者：
Durbin, S. M.