A SINGLE-CHIP BALANCED SIS MIXER FOR 200-300 GHz
A SINGLE-CHIP BALANCED SIS MIXER FOR 200-300 GHz
复制标题
适用于 200-300 GHz 的单芯片平衡 SIS 混频器
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
K. Crady
中科院分区：
文献类型：
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作者：
A. Kerr;S. Pan;A. Lichtenberger;N. Horner;J. Effland;K. Crady
平衡混合器是在2 × 1毫米石英衬底上制造的，其中包含一个RF正交混合器和两个SIS混合器。这些元件是在电容负载的共面波导中实现的，这样可以最大限度地减少相邻元件之间的杂散耦合以及在厚石英衬底中耦合到不希望的模式。信号波导和本LO波导通过悬浮带状线耦合到主衬底的分离端口。混合料采用UVA铌/氧化铝/铌工艺制备。在225-300 GHz频段，混频器噪声温度为37-48 K，接收机总体噪声温度为46-78 K DSB，均指低温恒温器外。LO- rf隔离度为bbb12db，我们希望通过减少LO和信号端口之间基板下的功率泄漏来提高隔离度。
The balanced mixer is fabricated on a 2 x 1 mm quartz substrate which contains an RF quadrature hybrid and two SIS mixers. These components are realized in capacitively-loaded coplanar waveguide, which minimizes stray coupling between adjacent components and coupling to undesired modes in the thick quartz substrate. Signal and LO waveguides are coupled to separate ports of the main substrate via suspended striplines. The mixers were fabricated using the UVA Nb/Al-oxide /Nb process. Over the 225-300 GHz band, the mixer noise temperature was 37-48 K and the overall receiver noise temperature was 46-78 K DSB, both referred to outside the cryostat. The LO-to-RF isolation was >12 dB, which we hope to improve by reducing leakage of power under the substrate between the LO and signal ports.