PSP-based compact FinFET model describing dc and RF measurements
PSP-based compact FinFET model describing dc and RF measurements
复制标题
基于 PSP 的紧凑型 FinFET 模型描述直流和射频测量
DOI：
10.1109/iedm.2006.346990
复制
发表时间：
2006
期刊：
影响因子：
--
通讯作者：
D. Klaassen
中科院分区：
文献类型：
--
作者：
G. Smit;A. Scholten;N. Serra;R. Pijper;R. Van Langevelde;A. Mercha;G. Gildenblat;D. Klaassen
提出了一种新的基于PSP的紧凑型对称三端FinFET模型，该模型适用于数字、模拟和RF电路仿真。该模型是基于表面电位的，并被证明可以准确地描述TCAD数据和测量的FinFET电流，电导和电容
We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, which is suitable for digital, analog, and RF circuit simulation. The model is surface potential based and is demonstrated to accurately describe both TCAD data and measured FinFET currents, conductances, and capacitances