Defects related to DRAM leakage current studied by electrically detected magnetic resonance
Defects related to DRAM leakage current studied by electrically detected magnetic resonance
复制标题
通过电检测磁共振研究与 DRAM 漏电流相关的缺陷
DOI：
10.1016/s0921-4526(01)00928-0
复制
发表时间：
2001
影响因子：
2.8
通讯作者：
K. Hamada
中科院分区：
文献类型：
--
作者：
T. Umeda;Y. Mochizuki;K. Okonogi;K. Hamada
