Switching Spin and Charge between Edge States in Topological Insulator Constrictions
Switching Spin and Charge between Edge States in Topological Insulator Constrictions
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DOI：
10.1103/physrevlett.107.086803
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发表时间：
2011-08-17
影响因子：
8.6
通讯作者：
Richter, Klaus
中科院分区：
文献类型：
--
作者：
Krueckl, Viktor;Richter, Klaus
我们展示了如何在相反的边缘状态，重叠在拓扑绝缘体碲化汞（碲化汞）的收缩之间的耦合，可以用于转向到不同的边缘模式和受控的自旋开关的电荷流。与传统的自旋晶体管不同，开关不依赖于可调的Rashba自旋轨道相互作用，而是依赖于边缘态波函数的能量。基于这种机制，并支持广泛的数值输运计算，我们提出了两种不同的方式来控制自旋和电荷电流，这取决于局部门控的收缩，从而在高保真自旋晶体管。
We show how the coupling between opposite edge states, which overlap in a constriction made of the topological insulator mercury telluride (HgTe), can be employed both for steering the charge flow into different edge modes and for controlled spin switching. Unlike in a conventional spin transistor, the switching does not rely on a tunable Rashba spin-orbit interaction, but on the energy dependence of the edge state wave functions. Based on this mechanism, and supported by extensive numerical transport calculations, we present two different ways to control spin and charge currents, depending on the local gating of the constriction, resulting in a high fidelity spin transistor.