Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for 1.55μm emission
Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for 1.55μm emission
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1.55μm 发射隧道注入结构中量子阱-量子冲刺能量转移的实验证据
DOI：
10.1063/1.2472543
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发表时间：
2007
影响因子：
4
通讯作者：
A. Forchel
中科院分区：
文献类型：
--
作者：
G. Sȩk;P. Poloczek;P. Podemski;R. Kudrawiec;J. Misiewicz;A. Somers;S. Hein;S. Höfling;A. Forchel
本文报道了InP基隧道注入结构中能量传递的研究。该结构由InAs闪烁InAlGaAs量子线（QDashes）和InGaAs闪烁InAlGaAs量子阱（QW）组成，设计用于室温1.55μm发射。温度依赖的光致发光激发（PLE）光谱被用来实验证实，在井中创建的载流子通过隧道通过薄的InAlAs scinInAlGaAs势垒到达量子破折号层，并在那里辐射复合。在高达130 K的温度下检测到可测量的QW-QDash能量转移。整个体系的电子结构由调制光谱得到的表现出完全符合PLE测量结果。
Here comes a report on the investigation of the energy transfer in InP-based tunnel injection structures, consisting of InAs∕InAlGaAs quantum dashes (QDashes) and an InGaAs∕InAlGaAs quantum well (QW), designed for 1.55μm emission at room temperature. Temperature dependent photoluminescence excitation (PLE) spectroscopy was used to experimentally confirm that the carriers created in the well reach the quantum dash layer by the tunneling through a thin InAlAs∕InAlGaAs barrier and recombine there radiatively. A measurable QW-QDash energy transfer has been detected up to 130K. The electronic structure of the whole complex system obtained by modulation spectroscopy exhibits full conformity with the PLE measurement results.