Synthesis of High Quality n-type CdSe Nanobelts and Their Applications in Nanodevices
Synthesis of High Quality n-type CdSe Nanobelts and Their Applications in Nanodevices
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高质量n型CdSe纳米带的合成及其在纳米器件中的应用
DOI：
10.1021/jp9031139
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发表时间：
2009-08-13
影响因子：
3.7
通讯作者：
Qin, Guogang
中科院分区：
文献类型：
--
作者：
Liu, Cui;Wu, Peicai;Qin, Guogang
Cd-enriched ambient, high quality n-type CdSe nanobelts (NBs) with various electron concentrations (from similar to 10(16) to 10(18) cm(-3)), which can meet different device requirements, were synthesized via the chemical vapor deposition (CVD) method. The electron mobilities are much higher than those reported previously for CdSe one-dimensional (1D) nanostructures. High performance single CdSe NB field effect transistors (NB-FETs) and CdSe NB/p(+)-Si heterojunction light emitting diodes (HLEDs) are fabricated and studied. The NB-FETs have the best performance among the reported CdSe 1D nano-FETs with an on-off ratio of similar to 3 x 10(8), a threshold voltage of similar to-4.1 V, and a maximum transconductance of similar to 1.49 mu S. The room temperature electroluminescence spectra of the HLEDs consist of only an intense CdSe band-edge emission peak (similar to 708 nm) with a full width at half-maximum of about 29 nm.
