New approach to the high quality epitaxial growth of lattice‐mismatched materials
New approach to the high quality epitaxial growth of lattice‐mismatched materials
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DOI：
10.1063/1.97204
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发表时间：
1986-07
影响因子：
4
通讯作者：
S. Luryi;E. Suhir
中科院分区：
文献类型：
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作者：
S. Luryi;E. Suhir
我们重新考虑了在晶格失配的衬底上生长应变异质层的临界层厚度hc的问题，使用了一种新的方法，该方法使我们能够确定双材料组件中应力的空间分布，并包括有限尺寸样品的影响。在多孔硅衬底上的晶格失配材料的无位错生长的可能性被讨论作为在横向尺寸l的小种子垫上的异质外延生长的更一般问题的示例，在整个衬底晶片上具有均匀的晶体取向。结果表明，对于给定的失配f，临界膜厚度hlc强烈地依赖于l，当后者足够小时急剧上升，l = lmin。特征尺寸lmin（f），在其以下，有效地，hlc（f）→∞，根据实验已知的（或计算的单片衬底上的生长）函数h∞c（f）hc（f）来确定。当l ≥ lmin时，则整个弹性应力集中在孔内。
We have reconsidered the problem of the critical layer thickness hc for growth of strained heterolayers on lattice‐mismatched substrates, using a new approach which allows us to determine the spatial distribution of stresses in a bi‐material assembly and include the effects of a finite size of the sample. The possibility of dislocation‐free growth of lattice‐mismatched materials on porous silicon substrates is discussed as an example of a more general problem of heteroepitaxial growth on small seed pads of lateral dimension l, having a uniform crystal orientation over the entire substrate wafer. It turns out that for a given mismatch f, the critical film thickness hlc strongly depends on l, rising sharply when the latter is sufficiently small, l≲lmin. The characteristic size lmin( f ) below which, effectively, hlc( f )→∞, is determined in terms of the experimentally known (or calculated for growth on a monolithic substrate) function h∞c( f )≡hc( f ). When l≲lmin, then the entire elastic stress in the epit...