X-RAY CRYSTAL TRUNCATION ROD SCATTERING MEASUREMENT OF ASH3-EXPOSED INP/INPAS/INP SINGLE HETEROSTRUCTURES
X-RAY CRYSTAL TRUNCATION ROD SCATTERING MEASUREMENT OF ASH3-EXPOSED INP/INPAS/INP SINGLE HETEROSTRUCTURES
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ASH3 暴露的 INP/INPAS/INP 单异质结构的 X 射线晶体截棒散射测量
DOI：
10.1063/1.114203
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发表时间：
1995
影响因子：
4
通讯作者：
H. Kamei
中科院分区：
文献类型：
--
作者：
Y. Takeda;Y. Sakuraba;K. Fujibayashi;M. Tabuchi;T. Kumamoto;I. Takahashi;J. Harada;H. Kamei
通过X射线晶体截断棒散射测量揭示了具有生长中断和AsH3暴露表面的InP样品的原子级异质界面结构，具有20 A厚的帽层。在整个InP晶片中只有一个改性层的样品中，获得了As原子分布、盖层厚度和晶格的四角畸变。计算出的As总量与通过荧光X射线分析获得的值完全匹配。
The atomic‐level heterointerface structures of InP samples that contain growth interrupted and AsH3‐exposed surface, with 20 A thick cap layer, were revealed by x‐ray crystal truncation rod scattering measurement. The As atom distribution, the thickness of the cap layer, and the tetragonal distortion of the lattices were obtained from the samples that have only single modified layer in the whole InP wafer. The calculated total amounts of As matched well with the value obtained by fluorescence x‐ray analysis.