Triggered Single‐Photon Emission of Resonantly Excited Quantum Dots Grown on (111)B GaAs Substrate
Triggered Single‐Photon Emission of Resonantly Excited Quantum Dots Grown on (111)B GaAs Substrate
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(111)B GaAs 衬底上生长的共振激发量子点的触发单光子发射
DOI：
10.1002/pssr.202200133
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
S. Reitzenstein
中科院分区：
文献类型：
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作者：
M. von Helversen;A. V. Haisler;Marat Petrovich Daurtsev;D. Dmitriev;A. Toropov;S. Rodt;V. Haisler;I. A. Derebezov;S. Reitzenstein
近几十年来，半导体量子点（QD）已被证明是各种光子应用的有价值的候选源。特别令人感兴趣的是，由于它们在量子通信和计算中的广泛适用性，不可区分的光子以及纠缠光子对，它们可以按需发射。后者需要具有小到消失的激子精细结构分裂的高度对称的QD。本文报道了通过分子束外延（MBE）在（111）B-GaAs衬底上生长的量子点的量子光学性质，以研究它们在准共振p壳层激发和严格共振s壳层激发下的触发单光子发射。研究揭示了这些类型的量子点非常好的发射特性，特别是在s-壳层共振激发下。事实上，结果产生了几乎无背景的触发单光子，具有与g（2）（0）=（0.033 ± 0.027）相关的优异的多光子抑制和（41 ± 10）%的不可逆性程度。所获得的结果强调了（111）-QD的高光学质量，并显示了它们在光子量子技术中的应用潜力。
In the recent decades, semiconductor quantum dots (QDs) have proven to be valuable candidates as sources for various photonic applications. Of particular interest are, due to their wide‐ranging applicability in quantum communication and computation, indistinguishable photons as well as entangled photon pairs, which can be emitted on demand. The latter require highly symmetric QDs with a small to vanishing excitonic fine‐structure splitting. Herein, quantum optical properties of QDs grown via molecular‐beam epitaxy (MBE) on (111)B‐GaAs substrate are reported to study their emission in terms of triggered single‐photon emission under quasi‐resonant p‐shell excitation, and under strict resonant s‐shell excitation. The investigations reveal very good emission properties of these types of QDs, especially under s‐shell resonant excitation. In fact, the results yield almost background‐free triggered single photons with excellent multiphoton suppression associated with g(2)(0) = (0.033 ± 0.027) and a degree of indistinguishability of (41 ± 10)%. The achieved results underline the high optical quality of (111)‐QDs and show their high potential for applications in photonic quantum technologies.