Single-spin measurement using single-electron transistors to probe two-electron systems
Single-spin measurement using single-electron transistors to probe two-electron systems
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DOI：
10.1103/physrevb.61.2961
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发表时间：
2000-01-15
影响因子：
3.7
通讯作者：
Wiseman, H
中科院分区：
文献类型：
--
作者：
Kane, BE;McAlpine, NS;Wiseman, H
我们提出了一种通过用单电子晶体管（SET）探测两电子系统，来测量嵌入在固体中的单旋转的方法。保利原理对允许的两电子状态施加的限制意味着这种系统的旋转状态对电子的轨道状态（位置）具有深远的影响，这是一个非常适合测量的参数。我们专注于一个能够使用当前技术制造的特定系统：SI/SIO2附近的SI中的TE双向供体，接口和直接位于Set Island Electerode下方，我们概述了能够解决单电子和单电子和能够解决的测量策略该系统中的核旋转。我们讨论了由套装和晶格声子发出的波动引起的自旋散射所施加的测量的局限性。我们得出的结论是，使用此策略，单旋旋转是对几种拟议的量子计算机架构的必要要求。
We present a method for measuring single spins embedded in a solid by probing two-electron systems with a single-electron transistor (SET). Restrictions imposed by the Pauli principle on allowed two-electron states mean that the spin state of such systems has a profound impact on the orbital states (positions) of the electrons, a parameter which SET's are extremely well suited to measure. We focus on a particular system capable of being fabricated with current technology: a Te double donor in Si adjacent to a Si/SiO2, interface and lying directly beneath the SET island electrode, and we outline a measurement strategy capable of resolving single-electron and nuclear spins in this system. We discuss the limitations of the measurement imposed by spin scattering arising from fluctuations emanating from the SET and from lattice phonons. We conclude that measurement of single spins, a necessary requirement for several proposed quantum computer architectures, is feasible in Si using this strategy.