Chemisorption ofH2O on Si(100)
Chemisorption ofH2O on Si(100)
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DOI：
10.1103/physrevb.27.7813
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发表时间：
1983-06
影响因子：
3.7
通讯作者：
D. Schmeißer;F. Himpsel;G. Hollinger
中科院分区：
文献类型：
--
作者：
D. Schmeißer;F. Himpsel;G. Hollinger
使用光电子能谱和光子刺激解吸在室温下研究了 H 2 O 在 Si (100)-(2×1) 上的化学吸附。在价带最大值以下 6.2、7.2 和 11.5 eV（比 E F 低 0.4 eV）处发现了三个 H 2 O 诱导的价轨道。它们可以归属于化学吸附的分子H 2 O。Si 2 p 能级发生化学位移-0.9 eV，对应于单个硅-氧键。结合观察到的功函数降低，我们认为 H 2 O 被吸附氧端朝下（可能倾斜）。
The chemisorption of H 2 O on Si (100)-(2× 1) has been studied at room temperature using photoelectron spectroscopy and photon-stimulated desorption. Three H 2 O-induced valence orbitals are found at 6.2, 7.2, and 11.5 eV below the valence-band maximum (which is 0.4 eV below E F). They can be assigned to chemisorbed molecular H 2 O. The Si 2 p level is chemically shifted by-0.9 eV corresponding to a single silicon-oxygen bond. Together with the observed work-function decrease, we suggest that H 2 O is adsorbed oxygen end down (possibly tilted).