Impact of Oxygen Plasma Treatment on the Device Performance of Zinc Oxide Nanoparticle-Based Thin-Film Transistors
Impact of Oxygen Plasma Treatment on the Device Performance of Zinc Oxide Nanoparticle-Based Thin-Film Transistors
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DOI：
10.1021/am2018223
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发表时间：
2012-03-01
影响因子：
9.5
通讯作者：
Halik, Marcus
中科院分区：
文献类型：
--
作者：
Faber, Hendrik;Hirschmann, Johannes;Halik, Marcus
通过光致发光光谱研究氧化锌纳米粒子的薄膜，观察到广泛的与缺陷相关的黄绿色发射。采用氧等离子体处理以减少缺陷数量，并将发射强度淬灭至初始值的4%。采用纳米颗粒作为有源半导体层的薄膜晶体管在氧等离子体处理后显示出改进的器件性能。最大漏极电流和载流子迁移率增加了1个数量级以上，达到标称值23 cm(2) V-(1) s(-1)，并且阈值电压降低。
Thin-films of zinc oxide nanoparticles were investigated by photoluminescence spectroscopy and a broad defect-related yellow-green emission was observed. Oxygen plasma treatment was applied in order to reduce the number of defects, and the emission intensity was quenched to 4% of the initial value. Thin-film transistors that incorporate the nanoparticles as active semiconducting layers show an improved device performance after oxygen plasma treatment. The maximum drain current and the charge carrier mobility increased more than 1 order of magnitude up to a nominal value of 23 cm(2) V-(1) s(-1) and the threshold voltage was lowered.