Auger electron spectroscopy analysis of SiC-whisker surfaces and SiC-whisker/alumina interfaces
Auger electron spectroscopy analysis of SiC-whisker surfaces and SiC-whisker/alumina interfaces
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SiC 晶须表面和 SiC 晶须/氧化铝界面的俄歇电子能谱分析
DOI：
10.1557/jmr.1995.1016
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发表时间：
1995
影响因子：
2.7
通讯作者：
K. B. Alexander
中科院分区：
文献类型：
--
作者：
D. Braski;K. B. Alexander
俄歇电子能谱 (AES) 用于检查原样和氧化碳化硅晶须及其在制造成 SiC 晶须增强氧化铝复合材料后各自的晶须/基体界面。收到的晶须表面呈现出 2-3 nm 厚的富含 C 的近表面区域。在外表面检测到氧气，但在表面 25 nm 内减少至接近零。氧化晶须具有60 nm厚的SiO_2表面层，这与透射电子显微镜观察结果一致。两种复合材料中的晶须/基体界面均由 C-Si-O 非晶材料薄层（<0.5 nm）组成。热压过程中，氧化晶须上厚厚的SiO_2层从界面处脱落。结论是：（i）用原样 SiC 晶须制造的复合材料的较高韧性可能与其 SiC_w /Al_2O_3 界面中较高的 C 和较低的 O 有关，（ii）使用制造前自由晶须的表面成分无法可靠地预测界面成分。
Auger Electron Spectroscopy (AES) has been used to examine as-received and oxidized silicon carbide whiskers and their respective whisker/matrix interfaces after fabrication into SiC-whisker-reinforced alumina composites. As-received whisker surfaces exhibited a 2–3 nm-thick near-surface region that was C-rich. Oxygen was detected at the outer surface, but diminished to near zero within 25 nm of the surface. Oxidized whiskers had 60 nm-thick SiO_2 surface layers, which was in agreement with the transmission electron microscopy observations. The whisker/matrix interfaces in both composites consisted of thin (<0.5 nm) layers of a C-Si-O noncrystalline material. The thick SiO_2 layers on the oxidized whiskers were ejected from the interfaces during hot-pressing. It was concluded that (i) the higher toughness of the composite fabricated with as-received SiC whiskers may be related to the higher C and lower O in its SiC_ w /Al_2O_3 interfaces, and (ii) interface composition cannot be reliably predicted using the surface composition of free whiskers prior to fabrication.