Experimental Extraction of the Charge Centroid of Holes Trapped in Metal–Oxide–Nitride–Oxide–Semiconductor Memories
Experimental Extraction of the Charge Centroid of Holes Trapped in Metal–Oxide–Nitride–Oxide–Semiconductor Memories
复制标题
金属-氧化物-氮化物-氧化物-半导体存储器中俘获空穴电荷质心的实验提取
DOI：
10.1149/08603.0023ecst
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Kiyoteru Kobayashi
中科院分区：
文献类型：
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作者：
H. Mino;Kiyoteru Kobayashi
为了获得金属-氧化物-氮化物-氧化物-硅（MONOS）型存储器中氮化硅薄膜中空穴的电荷质心，提出了一种基于Fowler-Nordheim（FN）隧穿电流分析的方法.利用所提出的方法测定了高栅压下氮化硅薄膜中空陷阱中心俘获的电荷质心和空穴密度。当平带电压偏移增加时，陷获在氮化硅膜中的空穴的xnlt从膜的中间向阻挡氧化物-氮化硅界面移动。最后，x射线从界面处到达2.5nm。我们还表明，在注入足够数量的空穴后，俘获空穴的密度在1.0× 1013个空穴/cm ~ 2处饱和。该方法对分析MONOS器件中的空穴俘获现象是有用的。
To obtain the charge centroid of holes trapped in the silicon nitride film in the metal-oxide-nitride-oxide-silicon (MONOS)-type memory, we proposed a method based on the analysis of Fowler-Nordheim (FN) tunneling current through the blocking oxide film. The charge centroid and the density of holes captured by empty trap centers in the silicon nitride film at high gate voltages were determined by means of the proposed method. x̅t of holes trapped in the silicon nitride film moved from the middle of the film toward the blocking oxide-silicon nitride interface as the flat-band voltage shift increased. Finally, x̅t reached 2.5 nm from the interface. We also have shown that the density of trapped holes was saturated at 1.0× 1013 holes/cm2 after a sufficient number of holes were injected. The proposed method is useful to analyze the hole trapping phenomena in MONOS devices.