Analysis of spectroscopic‐ellipsometry and thermoreflectance spectra of Si
Analysis of spectroscopic‐ellipsometry and thermoreflectance spectra of Si
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Si 的分光椭圆光度法和热反射光谱分析
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
S. Adachi
中科院分区：
文献类型：
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作者：
T. Miyazaki;S. Adachi
测量了块状单晶硅的光谱椭圆光度（SE）和热反射（TR）光谱。在室温下对同一样品在 2.5–6.0 eV 范围内进行测量。这些数据是根据带间跃迁的简化模型（称为模型介电函数）进行分析的。结果与整个光子能量范围内的实验数据非常吻合。这一发现明确地将温度引起的介电函数（TR）变化与介电函数（SE）的一阶导数联系起来。
Spectroscopic‐ellipsometry (SE) and thermoreflectance (TR) spectra of bulk single‐crystalline Si are measured. Measurements are made on the same sample in the 2.5–6.0 eV range at room temperature. These data are analyzed on the basis of a simplified model of interband transitions, named the model dielectric function. Results are in satisfactory agreement with the experimental data over the entire range of photon energies. The finding definitely links the temperature‐induced change in the dielectric function (TR) to the first derivative of the dielectric function (SE).