Highly insulating phase of Bi2O2Se thin films with high electronic performance
Highly insulating phase of Bi2O2Se thin films with high electronic performance
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具有高电子性能的Bi2O2Se薄膜的高绝缘相
DOI：
10.1007/s12274-022-5046-3
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发表时间：
2022
期刊：
影响因子：
9.9
通讯作者：
Xiao Lin
中科院分区：
文献类型：
--
作者：
Tao Wang;Zhuokai Xu;Ziye Zhu;Mengqi Wu;Zhefeng Lou;Jialu Wang;Wanghua Hu;Xiaohui Yang;Tulai Sun;Xiaorui Zheng;Wenbin Li;Xiao Lin
Bi_2O_2Se作为下一代高性能半导体的候选材料具有很强的竞争力。虽然被称为半导体，但Bi_2O_2Se薄膜具有高电导率，即，金属行为，由于自发电离缺陷。半导体/绝缘膜在基于低功率、高性能电子器件的广泛应用中具有实际重要性，其存在缺乏确凿的证据。在这里，我们以可控的方式合成了高度绝缘的薄膜，其表现出沟道电阻高达1 TΩ的半导体行为。电子化学势位于带隙内，在某些情况下，甚至低于电中性水平，标志着空穴型半导体的痕迹。绝缘设备的性能仍然很高，可与以前的高质量设备相媲美。特别地，阈值电压（Vth）是正的，与所报道的常见负值相反。计算表明，我们的合成条件抑制电子供体（Se空位（VSe）），促进形成补偿受体（Bi空位（VBi）），导致绝缘行为。我们的工作提供了深入了解Bi 2 O2 Se的电子动力学，向p型晶体管又迈进了一步，并为高性能半导体中的工程铁电性提供了一个有价值的操场。
Bi2O2Se is highly competitive as a candidate of next-generation high-performance semiconductors. Though dubbed as semiconductor, Bi2O2Se films exhibited high conductance, i.e., metallic behavior, due to spontaneously ionized defects. Semiconducting/insulating films are of practical importance in broad applications based on low-power, high-performance electronics, the existence of which lacks firm evidence. Here, we synthesized highly insulating films in a controlled way, which exhibit semiconducting behavior with channel resistance up to 1 TΩ. The electron chemical potential lies within the band gap, in some cases, even below the charge neutrality level, signifying the trace of hole-type semiconducting. The performance of insulating devices remains high, comparable to high-quality devices previously. Especially, the threshold voltage (Vth) is positive, contrary to common negative values reported. Calculations indicate that our synthesis conditions suppress electron donors (Se vacancies (VSe)) and promote the formation of compensating acceptors (Bi vacancies (VBi)), leading to insulating behaviors. Our work offers insights into electron dynamics of Bi2O2Se, moves one step further towards p-type transistors and provides a valuable playground for engineering ferroelectricity in high-performance semiconductors.