FinFET - A self-aligned double-gate MOSFET scalable to 20 nm
FinFET - A self-aligned double-gate MOSFET scalable to 20 nm
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DOI：
10.1109/16.887014
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发表时间：
2000-12-01
影响因子：
3.1
通讯作者：
Hu, CM
中科院分区：
文献类型：
--
作者：
Hisamoto, D;Lee, WC;Hu, CM
据报道，MOSFET 的栅极长度低至 17 nm。为了抑制短沟道效应，提出了一种新型自对准双栅MOSFET FinFET，通过使用硼掺杂Si0.4Ge0.6作为栅极材料，实现了超薄体器件所需的阈值电压。这种新型垂直双栅极 MOSFET 的准平面性质可以使用传统平面 MOSFET 工艺技术相对轻松地制造。
MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed, By using boron-doped Si0.4Ge0.6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily using the conventional planar MOSFET process technologies.