Preparation and Properties of Thin Film MgO Secondary Emitters
Preparation and Properties of Thin Film MgO Secondary Emitters
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DOI：
10.1063/1.1722256
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发表时间：
1956-11
影响因子：
3.2
通讯作者：
P. Wargo;B. V. Haxby;W. G. Shepherd
中科院分区：
文献类型：
--
作者：
P. Wargo;B. V. Haxby;W. G. Shepherd
讨论了在镁银合金上制备具有高二次发射率的MgO薄膜的一些简单方法。的氧化过程和讨论的基本现象。在600伏电压下二级产率为12的膜可以通过在氧气或二氧化碳中氧化来制备。给出了影响二次发射极寿命的一些因素的研究结果。这些包括对来自氧化物涂覆阴极的蒸发产物的二次发射特性的影响以及在电子轰击下薄膜的劣化。
Some simple methods of preparing MgO thin films on Mg–Ag alloy with high secondary emission ratios are discussed. The oxidation procedure and a discussion of the underlying phenomena are presented. Films with a secondary yield of 12 at 600 v may be produced by oxidation in either oxygen or carbon dioxide. Results of a study of some of the factors influencing the life of a secondary emitter are given. These include the effects on the secondary emitting characteristics of evaporation products from an oxide‐coated cathode and the deterioration of the thin film under electron bombardment.