Imaging and single dot spectroscopy of InP self-assembled quantum dots
Imaging and single dot spectroscopy of InP self-assembled quantum dots
复制标题
InP自组装量子点的成像和单点光谱
DOI：
10.1016/s0022-2313(99)00213-6
复制
发表时间：
2000
影响因子：
3.6
通讯作者：
Y. Masumoto
中科院分区：
文献类型：
--
作者：
M. Sugisaki;H. Ren;S. Nair;Jeong;S. Sugou;T. Okuno;Y. Masumoto
利用光学显微镜研究了Ga0.5In0.5P中InP自组装量子点(SADS)在不同条件下的光学性质。在宏观光致发光光谱和微观光致发光(μ-PL)图像中发现InPSADS具有很强的光学各向异性，表现出双重对称性，反映了Ga0.5In0.5P基质的各向异性结构。随着温度的升高，μ-PL峰连续红移，荧光强度逐渐恢复。还研究了单个量子点的荧光间歇性。在弱近红外激光照射下，开关开关速率显著提高。讨论了基质对SADS光学性质的影响。
Optical properties of InP self-assembled quantum dots (SADs) embedded in Ga0.5In0.5P were studied under various conditions by means of the micro-spectroscopy. A strong optical anisotropy of the InP SADs was found in the macro-photoluminescence spectra and micro-photoluminescence (μ-PL) images showing two-fold symmetry, which reflects the anisotropic structure of the Ga0.5In0.5P matrix. Successive red-shifts of the μ-PL peaks and a recovery of the PL intensity with the increase of the temperature were clearly observed. The fluorescence intermittency from a single quantum dot was also investigated. The on–off switching rate is drastically enhanced by a weak near-IR laser beam irradiation. The influence of the matrix on the optical properties of the SADs is discussed.