Optimization of the Multilayer Structures for a High Field-Sensitivity Biochip Sensor Based on the Planar Hall Effect
Optimization of the Multilayer Structures for a High Field-Sensitivity Biochip Sensor Based on the Planar Hall Effect
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DOI：
10.1109/tmag.2009.2023426
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发表时间：
2009-09
影响因子：
2.1
通讯作者：
T. Q. Hung;Sunjong Oh;S. Anandakumar;Jong-Ryul Jeong;Dong-Yong Kim;C. Kim
中科院分区：
文献类型：
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作者：
T. Q. Hung;Sunjong Oh;S. Anandakumar;Jong-Ryul Jeong;Dong-Yong Kim;C. Kim
我们研究了在反铁磁层和铁磁层之间引入一层很薄的铜隔离层的双层、自旋阀和弱交换偏置耦合双层三种多层结构中的平面霍尔效应。这些薄膜分别为Ta（3）/NiFe（10）/IrMn（10）/Ta（3）（nm）、Ta（3）/NiFe（10）/Cu（1.2）/NiFe（2）/IrMn（10）/Ta（3）（nm）和Ta（3）/NiFe（10）/Cu（0.2）/IrMn（10）/Ta（3）（nm）。所有三种结构中的活性层保持恒定。所制备的PHE传感器的场灵敏度分别为1.6 μ V middot Oe-1、5 μ V middot Oe-1和12 μ V middot Oe-1。结果表明，基于弱交换偏置耦合结构的传感器具有最高的场灵敏度。这种弱交换偏置耦合结构的提出，为PHE传感器材料的发展奠定了基础。
We have investigated the planar Hall effect (PHE) in three multilayer structures such as a bilayer, a spin-valve and a weak exchange bias coupling bilayer structure introduced a very thin Cu spacer layer between the antiferromagnetic and ferromagnetic layers. These thin films are Ta(3)/NiFe(10)/IrMn(10)/Ta(3) (nm), Ta(3)/NiFe(10)/Cu(1.2)/NiFe(2)/IrMn(10)/Ta(3) (nm), and Ta(3)/NiFe(10)/Cu(0.2)/IrMn(10)/Ta(3) (nm), respectively. The active layers in all three structures were kept constant. The field-sensitivity of the fabricated PHE sensors obtained for the respected structures are about 1.6 muV middot Oe-1, 5 muV middot Oe-1, and 12 muV middot Oe-1, respectively. The results suggest that the sensor based on a weak exchange bias coupling structure has the highest field-sensitivity compared with the others. The proposed weak exchange bias coupling structure emphasizes for the development of the PHE sensor materials.