InSb Avalanche Photodiodes on GaAs Substrates for Mid-Infrared Detection
InSb Avalanche Photodiodes on GaAs Substrates for Mid-Infrared Detection
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DOI：
10.1109/ted.2019.2956283
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发表时间：
2020-01-01
影响因子：
3.1
通讯作者：
Cumming, D. R. S.
中科院分区：
文献类型：
--
作者：
Alimi, Y.;Pusino, V.;Cumming, D. R. S.
我们提出了基于锑化铟的中红外（中红外）检测设备具有增强的灵敏度。InSb器件在气体传感和成像等领域有着广泛的应用前景。InSb雪崩光电二极管（APD）单片集成与GaAs衬底制成的直径范围从90至200 μ m $和广泛的特点，温度范围从77 K至300 K。在120 K的零偏置响应率为2 A/W的测量，对应于55的量子效率。在120 K下，在-3 V的反向偏置下获得了10的实验增益值，据我们所知，这是InSb APD有史以来报道的最高增益值。这些结果铺平了道路的单片集成中红外阵列与增加增益和波长可调谐性的发展。
We present indium antimonide-based devices for mid-infrared (mid-IR) detection with enhanced sensitivity. InSb devices will be useful for many applications, such as gas sensing and imaging. InSb avalanche photodiodes (APDs) monolithically integrated with GaAs substrates were fabricated with diameters ranging from 90 to $200\mu \text{m}$ and extensively characterized at temperatures ranging from 77 K to 300 K. At 120 K a zero-bias responsivity of 2 A/W was measured, corresponding to a quantum efficiency of 55. An experimental gain value of 10 at a reverse bias of -3 V was obtained at 120 K, which to the best of our knowledge, is the highest ever reported for InSb APDs. These results pave the way for the development of a monolithically integrated mid-IR array with added gain and wavelength tunability.