Spin-dependent processes at the crystalline Si-SiO2 interface at high magnetic fields
Spin-dependent processes at the crystalline Si-SiO2 interface at high magnetic fields
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高磁场下晶体 Si-SiO2 界面的自旋相关过程
DOI：
10.1103/physrevb.78.045303
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发表时间：
2008
影响因子：
3.7
通讯作者：
C. Boehme
中科院分区：
文献类型：
--
作者：
D. McCamey;Gavin W. Morley;H. Seipel;L. Brunel;J. Tol;C. Boehme
对强磁场（B 0 <$8.5 T）下（111）取向掺磷（[P]<$1015 cm−3）硅/二氧化硅界面上自旋相关的过剩电荷载流子跃迁的性质进行了实验研究. 在3 K≤T≤12 K的温度范围内，用电探测磁共振（EDMR）谱研究了31 P施主电子超精细分裂跃迁和顺磁界面缺陷. 在这些以前未达到的（EDMR）磁场强度的结果揭示了自旋相关的过程，不同于以前很好地研究31 P施主和Pb状态之间的复合，这在低磁场占主导地位的主导地位。虽然磁共振电流响应由于31 P和Pb状态仍然存在，它们不相关，只有Pb的贡献可以与界面过程相关联，由于自旋相关的能量和物理相邻的Pb状态之间的隧穿。这项工作提供了一个实验演示的自旋相关隧道之间的物理相邻和相同的电子状态，提出了凯恩自然（伦敦）393 133（1998）]读出施主量子位。
An experimental study on the nature of spin-dependent excess charge-carrier transitions at the interface between (111)-oriented phosphorous-doped ([P]≈1015 cm−3) crystalline silicon and silicon dioxide at high magnetic field (B0≈8.5 T) is presented. Electrically detected magnetic-resonance (EDMR) spectra of the hyperfine split 31P donor-electron transitions and paramagnetic interface defects were conducted at temperatures in the range of 3 K≤T≤12 K. The results at these previously unattained (for EDMR) magnetic-field strengths reveal the dominance of spin-dependent processes that differ from the previously well investigated recombination between the 31P donor and the Pb state, which dominates at low magnetic fields. While magnetic resonant current responses due to 31P and Pb states are still present, they do not correlate and only the Pb contribution can be associated with an interface process due to spin-dependent tunneling between energetically and physically adjacent Pb states. This work provides an experimental demonstration of spin-dependent tunneling between physically adjacent and identical electronic states as proposed by Kane Nature (London) 393 133 (1998)] for readout of donor qubits.