A post-CMOS compatible smart yarn technology based on SOI wafers
A post-CMOS compatible smart yarn technology based on SOI wafers
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DOI：
10.1016/j.sna.2015.07.034
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发表时间：
2015-09-01
影响因子：
4.6
通讯作者：
Xu, Yong
中科院分区：
文献类型：
--
作者：
Tu, Hongen;Chen, Xiaoyu;Xu, Yong
智能纱线和智能纺织品由于其在各种娱乐，医疗保健和军事应用中的重要作用，近年来得到了广泛的研究。然而，由于难以集成硅基传感器和CMOS（互补金属氧化物半导体）电路，迄今为止开发的大多数智能纱线和纺织品都没有复杂的功能。本文报道了一种SOI（绝缘体上硅）CMOS兼容技术来制造智能纱线，使CMOS和传感器的单片和无形的集成。开发了具有增强聚二甲基硅氧烷（PDMS）芯的管状聚对二甲苯智能纱线设计。使用各向同性XeF 2硅蚀刻和保形聚对二甲苯涂层来形成外壳并从SOI晶片释放电子/感测组件。为了证明这一概念，硅应变片和MOSFET（金属氧化物半导体场效应晶体管）集成。通过与硅应变计集成的智能纱线纤维在手腕上的人体动脉血液脉搏检测已经被证明。(C)2015 Elsevier B. V.版权所有。
Smart yarn and intelligent textiles have been extensively researched recently due to their significant roles in various entertainment, healthcare and military applications. However, most smart yarns and textiles developed so far do not come with sophisticated functionality due to the difficulty of integrating silicon-based sensors and CMOS (complementary metal-oxide-semiconductor) circuits. This paper reports an SOI (silicon-on-insulator) CMOS compatible technology to fabricate smart yarn, enabling the monolithic and invisible integration of CMOS and sensors. A tubular shaped parylene smart yarn design with a reinforcing polydimethylsiloxane (PDMS) core has been developed. Isotropic XeF2 silicon etching and conformal parylene coating were used to form the outer shell and release the electronic/sensing components from an SOI wafer. To prove the concept, silicon strain gauges and MOSFETs (metal-oxide-semiconductor field-effect-transistors) were integrated. Human arterial blood pulse detection on the wrist by a smart yarn fiber integrated with a silicon strain gauge has been demonstrated. (C) 2015 Elsevier B.V. All rights reserved.