Thermally stable and radiation hard ferroelectric Hf0.5Zr0.5O2 thin films on muscovite mica for flexible nonvolatile memory applications
Thermally stable and radiation hard ferroelectric Hf0.5Zr0.5O2 thin films on muscovite mica for flexible nonvolatile memory applications
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白云母上的热稳定、抗辐射硬铁电 Hf0.5Zr0.5O2 薄膜，用于柔性非易失性存储器应用
DOI：
10.1021/acsaelm.9b00107
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发表时间：
2019
影响因子：
4.7
通讯作者：
Yichun Zhou
中科院分区：
文献类型：
--
作者：
Wenwu Xiao;Chen Liu;Yue Peng;Shuaizhi Zheng;Qian Feng;Chunfu Zhang;Jincheng Zhang;Yue Hao;Min Liao;Yichun Zhou
柔性衬底上的金属-铁电-金属（MFM）电容器在柔性非易失性存储器中具有良好的应用前景，但钙钛矿基铁电薄膜的可扩展性不足以及高性能铁电薄膜难以直接集成到现有的柔性衬底上是其实际应用的最大障碍。同时，由于非易失性存储器的应用不断增长，对苛刻条件（例如高温和高总电离剂量（TID）辐射）下的性能要求很高。在这里，我们集成了高度可扩展的铁电Hf0.5Zr0.5O2（HZO）薄膜的潜在的柔性云母基板上使用原子层沉积（ALD），以形成灵活的MFM电容器和调查的铁电性能，保持行为，和各种拉伸和压缩弯曲半径下的TaN/HZO/TaN/云母灵活的MFM电容器的耐久特性。此外，还在25至125 °C的宽温度范围内探索了基于HZO的MFM柔性电容器的这些特性。在1000次弯曲循环后，薄膜的铁电性在弯曲半径小于7.5mm的条件下仍能保持，在125 °C下烘烤104 s后仍能保持铁电性，外推失效保留时间大于10年。此外，该柔性器件在总剂量为1 Mrad（Si）的60 Co γ射线辐照下表现出了良好的铁电性能。我们的工作是一个关键的一步，在云母实现灵活的非易失性存储器在恶劣条件下工作的HfO 2基铁电存储器。
Metal–ferroelectric–metal (MFM) capacitors on flexible substrates are promising for flexible nonvolatile memory applications, while the insufficient scalability of perovskite-based ferroelectric thin films and the difficulty of direct integration of high performance ferroelectric thin films on current conventional flexible substrates are the most serious obstacles to their practical applications. Meanwhile, performance under harsh conditions (such as high temperature and high total ionized dose (TID) radiation) is highly demanded due to the growing applications for nonvolatile memory. Here, we integrate highly scalable ferroelectric Hf0.5Zr0.5O2(HZO) thin films on potential flexible mica substrates using atomic layer deposition (ALD) to form flexible MFM capacitors and investigate the ferroelectric properties, the retention behaviors, and endurance characteristics of the TaN/HZO/TaN/mica flexible MFM capacitors under various tensile and compressive bending radii. In addition, these characteristics of the HZO-based MFM flexible capacitors are explored in a wide temperature range from 25 up to 125 °C. The ferroelectricity of the film can be retained under a bending radius down to 7.5 mm after 1000 bending cycles, and the retention properties can be reserved under a bake time of 104s at 125 °C, with an extrapolated retention time-to-failure longer than 10 years. Furthermore, the flexible devices display robust ferroelectric performance against radiation of60Co γ-rays with a total dose of 1 Mrad (Si). Our work represents a critical step in HfO2-based ferroelectric memory implemented on mica toward flexible nonvolatile memory operated under harsh conditions.