Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium
Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium
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DOI：
10.1088/1009-1963/16/1/042
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发表时间：
2007-02
期刊：
影响因子：
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通讯作者：
De-Dong Han;Jin-Feng Kang;Xiaoyan Liu;Sun Lei;Luo Hao;Ru-Qi Han
中科院分区：
文献类型：
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作者：
De-Dong Han;Jin-Feng Kang;Xiaoyan Liu;Sun Lei;Luo Hao;Ru-Qi Han
本文报道了在n-锗衬底上溅射Hf和Ge，然后进行炉膛退火制备高钾HfO2栅极电介质。研究了溅射环境、退火环境和退火温度对锗衬底高钾HfO2栅极电介质电性能的影响。实验结果表明，在锗衬底上获得了具有良好电学特性的高钾HfO2栅极电介质，其电学性能与溅射环境、退火环境和退火温度密切相关。
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.