Vacancy Self-trapping During Rapid Thermal Annealing of Silicon Wafers
Vacancy Self-trapping During Rapid Thermal Annealing of Silicon Wafers
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DOI：
10.1063/1.2385069
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发表时间：
2006-11
影响因子：
4
通讯作者：
Thomas A. Frewen;T. Sinno
中科院分区：
文献类型：
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作者：
Thomas A. Frewen;T. Sinno
The density and spatial distribution of oxide precipitates within a crystalline silicon wafer is of paramount importance for microelectronic device yield. In this letter, the authors show how the formation of previously unconsidered, very small vacancy aggregates can explain macroscopic spatial variations in the oxide precipitate density, which are observed following certain rapid thermal annealing conditions. The formation of these nanometer-sized voids is predicted on the basis of their recent model for vacancy aggregation that accounts for high temperature entropic effects.
