Thin film properties by facing targets sputtering system
Thin film properties by facing targets sputtering system
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面向靶材溅射系统的薄膜特性
DOI：
10.1016/s0169-4332(00)00694-2
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发表时间：
2001
影响因子：
6.7
通讯作者：
M. Naoe
中科院分区：
文献类型：
--
作者：
K. Kim;I. Son;K. Song;S. Kong;M. Keum;S. Nakagawa;M. Naoe
本研究采用对向靶溅射(FTS)装置制备了具有应用前景的超高密度垂直磁记录介质Co-Cr薄膜，研究了薄膜厚度分布和c轴晶向取向。还研究了溅射装置最佳工作所需的放电特性，以便用FTS方法(装置)制备具有良好c轴晶向取向的薄膜，这种方法可以抑制高能粒子轰击引起的衬底温度升高，从而形成质量良好的薄膜。研究结果表明，FTS方法可以在宽磁场、宽气压范围内稳定工作，在低Ar气压下稳定放电。所制备的薄膜厚度呈良好的规则分布，可获得c轴晶向弥散角约为3.5°的良好薄膜。
In this study, film thickness distribution and c-axis crystalline orientation of deposited thin films were studied after preparing Co–Cr thin films, a promising ultra-high density perpendicular magnetic recording media, with a facing targets sputtering (FTS) apparatus. Electrical discharge characteristics needed for the optimum operation of sputter device was also studied in order to prepare thin films of superior c-axis crystalline orientation with FTS method (apparatus) in which thin film of fine quality can be formed because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. As a result of the study, it is confirmed that the FTS method can give stable working under broad magnetic field and range of gas pressure and stable electrical discharge under low Ar gas pressure. Film thickness of prepared thin film shows fairy regular distribution and could obtain good thin films whose dispersion angle of c-axis crystalline orientation is about 3.5°.